| PART |
Description |
Maker |
| W5232 W523X W5231 W5233 W5234 |
Power Speech LOW VOLTAGE ADPCM VOICE SYNTHESIZER
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (6 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (12 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (9 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (3 seconds @6.7K)
|
WINBOND[Winbond]
Winbond Electronics
|
| W24L11STQ |
LOW POWER & NORMAL SRAM 128Kx8
|
Winbond Electronics
|
| 28C010ERPGP-15 28C010ERPGP-12 28C010ERPGI-15 28C01 |
±15kV ESD-Protected, Slew-Rate-Limited, Low-Power, RS-485/RS-422 Transceivers
Low-Power, Slew-Rate-Limited RS-485/RS-422 Transceivers
Low-RON, Dual-SPST/Single-SPDT Clickless Switches with Negative Rail Capability
Single/Dual/Quad, Micropower, Single-Supply, Rail-to-Rail Op Amps
High-/Full-Speed USB 2.0 Switches x8的EEPROM
128Kx8 EEPROM 128Kx8 EEPROM
Hex SPDT Data Switch x8的EEPROM
|
Infineon Technologies AG
Vishay Intertechnology, Inc.
TE Connectivity, Ltd.
ITT, Corp.
Jameco Electronics
|
| M65608ENBSP M65608E |
Rad Tolerant 5V 128Kx8 Very Low Power CMOS SRAM
From old datasheet system
|
Atmel Corp
|
| N01L0818L1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NanoAmp Solutions
|
| N01M083WL1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| K6X1008T2D-TF85 K6X1008T2D K6X1008T2D-GF70 K6X1008 |
128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
SPST to 4PST Slide DIP Switches
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| EDD51163DBH-5BLS-F EDD51163DBH-6ELS-F EDD51163DBH- |
32M X 16 DDR DRAM, 5 ns, PBGA60
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range), Low Power Function
512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range), Low Power Function
|
ELPIDA MEMORY INC
|
| IDT72T51236L5BB IDT72T51236L5BBI IDT72T51256L6BBI |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|
| UC62LV0256CC UC62LV0256EI UC62LV0256 UC62LV0256AC |
Low Power CMOS SRAM 32K X8 Bits
|
List of Unclassifed Manufacturers
ETC[ETC]
|
