| PART |
Description |
Maker |
| BFT70 BFX80 BFX36 BFX11 BFX79 BFX81 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-18
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 60V V(BR)CEO | 200MA I(C) | TO-77
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-77
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-78
晶体管|晶体管|一对|互补| 60V的五（巴西）总裁| 600毫安一（c）|7
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 20V V(BR)CEO | 200MA I(C) | TO-77 晶体管|晶体管|一对|互补| 20V的五（巴西）总裁| 200mA的一（c）|7
|
TT electronics Semelab, Ltd.
|
| CENW51 CENW57 CENW51A CENW55 CENW56 CENW92 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-237VAR 晶体管|晶体管|进步党| 300V五（巴西）总裁| 500mA的一（c）|37VAR
|
SMSC, Corp.
|
| BC461-5 SEMELABLTD-BC461-5E1 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-5
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD
Seme LAB
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| D1103 D3232 D45D1 D43D6 D45D3 D45D5 DG189AP/883B D |
Refresh Counter
TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 4A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
Non-Muxed Address DRAM Muxed地址内存
Analog Switch 模拟开
Peripheral Miscellaneous 周边杂项
|
Intersil, Corp.
Rochester Electronics, LLC
|
| CSA708 CSA708Y CSA708O |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-92
NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS
|
Continental Device India Limited
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| KSP4250A |
TRANSISTOR,BJT,PNP,60V V(BR)CEO,TO-92
From old datasheet system
|
Samsung Electronics Inc
|
| GES5817J1 GES6221J1 GES6016J1 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | TO-92 晶体管|晶体管|进步党| 40V的五（巴西）总裁|92
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-92 晶体管|晶体管| npn型| 150伏五（巴西）总裁|92
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92 晶体管|晶体管|叩| 60V的五（巴西）总裁|2
|
Integrated Device Technology, Inc.
Central Semiconductor, Corp.
|
| 2SC4211-6 2SC4211-7 2SC4211-5 2SD1913S 2SC4640S 2S |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR 晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|的SOT - 23VAR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|92
|
Rohm Co., Ltd.
|
| BCX76-40 BF413 BC140-25 BC537-16 MPS6573 BC328-10 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 800MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 50MA I(C) | TO-92
Stratix II GX FPGA 130K FPGA-1508
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 200MA I(C) | TO-92
IC MAX 7000 CPLD 64 44-TQFP
IC FLEX 10KA FPGA
Cyclone II FPGA 50K FBGA-484
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-92
2GB DDR2 SDRAM VLP DIMM
MAX 7000 CPLD 128 MC 100-TQFP
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-37
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-92
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18
Cyclone FPGA 6K PQFP-240
CYCLONE III FPGA 119K 484FBGA
MAX 7000 CPLD 64 MC 100-TQFP
MAX 3000A CPLD 32 MC 44-TQFP
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
TRANSISTOR | BJT | NPN | 1A I(C) | TO-105
Dual Matched Amplifiers with Digitally Programmable Gain in MSOP; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C
IC MAX 7000 CPLD 128 144-TQFP
MAX II CPLD 1270 LE 144-TQFP
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:220; Package/Case:484-FBGA; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Leaded Cartridge Fuse; Current Rating:12A; Voltage Rating:32V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:32V; Body Material:Glass; Diameter:6.985mm; Leaded Process Compatible:Yes; Length:32.385mm; Series:315P RoHS Compliant: Yes
TRANSISTOR | BJT | PNP | 6V V(BR)CEO | TO-18 晶体管|晶体管|进步党| 6V的五（巴西）总裁|8
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管|叩| 18V的五（巴西）总裁| 100mA的一（c）|2
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | TO-92 晶体管|晶体管|进步党| 25V的五（巴西）总裁|2
MAX 7000 CPLD 512 MC 208-PQFP 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|2
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 1A条一（c）|2
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | TO-18
|
EM Microelectronic
Bourns, Inc.
SEMIKRON
Samsung Semiconductor Co., Ltd.
California Eastern Laboratories, Inc.
|
