PART |
Description |
Maker |
MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module 1600V high power thyristor module 1400V high power thyristor module 1200V high power thyristor module High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State GESS[GE Solid State] ETC
|
FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存??? High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??) High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五,10纳秒- 2微秒 HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp. Semtech Corporation
|
KSC5302DM |
High Voltage & High Speed Power Switch Application 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 High Voltage & High Speed Power Switch Application
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
TDA4817 TDA4817G Q67000-A8299 Q67000-A8298 |
PFC IC for High Power Factor and Acti... From old datasheet system Power Factor Controller IC for High Power Factor and Active Harmonic Filtering 0.5 A POWER FACTOR CONTROLLER, PDIP8 Power Factor Controller IC for High Power Factor and Active Harmonic Filtering 功率因数控制器IC,用于高功率因数,有源谐波滤
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
MA2830 |
IND, HIGH-POWER DENSITY, HIGH EFFICIENCY, SHIELDED Power Switching Regulators
|
Shindengen Electric Manufacturing Company, Ltd. Shindengen Electric Mfg.Co.Ltd
|
2SD2318 2SD2318V |
High-current gain Power Transistor (-60V/ -3A) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset High-current gain Power Transistor(60V/ 3A) High-current gain Power Transistor(60V, 3A)
|
Rohm CO.,LTD.
|
MT5400-UV-HP |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
2SJ114 |
HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER
|
Hitachi Semiconductor
|
08-130097-B 08-130097 |
Compant High-Insulation Power Relay, Polarized, 10A 外形图式PFC MEGAPAC大功率(2.4KW OUTLINE DRAWING PFC MEGAPAC HIGH POWER (2.4KW)
|
Vicor, Corp. VICOR[Vicor Corporation]
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|