PART |
Description |
Maker |
2SC3618UK-AZ |
700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR POWER, MINIMOLD, SC-62, 3 PIN
|
SUN Electronic Industries, Corp.
|
2SC5338-15 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
NESG270034-AZ NESG270034-T1-AZ |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) npn型硅锗射频晶体管输出功率放大介质 - Pin电源MINIMOLD34 PKG)的
|
California Eastern Laboratories, Inc.
|
UPA1981TE-T2 UPA1981TE-T2-A |
2800 mA, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET MINIMOLD, SC-95, 3 PIN 2800 mA, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, MINIMOLD, SC-95, 3 PIN
|
Vishay Intertechnology, Inc.
|
FA1A4ZL69-T1B FA1A4ZL67-T1B FA1A4ZL68-T1B |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
|
3M Company
|
2SC5801 2SC5801-T3 C5801 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
|
NEC[NEC] NEC Corp.
|
2SC4957 2SC4957-T1 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
California Eastern Labs
|
UPA814TC UPA814TC-T1 NECCORP.-PA814TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp.
|
NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
NESG2021M16 NESG2021M16-A NESG2021M16-T3 NESG2021M |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
California Eastern Labs
|
NESG2031M16-T3 NESG2031M16-T3-A NESG2031M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|