PART |
Description |
Maker |
0608-10/G/F 1012-15/G/F 1618-17/G/F 2023-21/G/F 25 |
FLANSCHLAGER KUNSTSTOFF 10ST D 6MM FLANSCHLAGER KUNSTSTOFF 10ST D 10MM FLANSCHLAGER KUNSTSTOFF 10ST D 16MM FLANSCHLAGER KUNSTSTOFF 10ST D 20MM FLANSCHLAGER KUNSTSTOFF 10ST D 25MM FLANSCHLAGER KUNSTSTOFF 10ST D 8MM FLANSCHLAGER塑料10ST8毫米
|
Dantona Industries, Inc.
|
12062R103K9AB 12062R104K9AB 2.23891E11 12062R823K8 |
KONDENSATOR 0.01UV 50V 10ST KONDENSATOR 0.1UF 50V 10ST CAPACITOR 10000PF 25V KONDENSATOR 25V 82NF KONDENSATOR 4700PF 50V 10ST KONDENSATOR 3300PF 50V 10ST KONDENSATOR 1000PF 50V 10ST KONDENSATOR 1000pF0V 10ST KONDENSATOR 10000PF KONDENSATOR 10000PF
|
Bourns, Inc. NXP Semiconductors N.V.
|
217.25 217.63 227.08 227002 021706.3TX832 02173.15 |
Fuse 4096k NV SRAM with Phantom Clock SICHERUNG 5X20 FLINK GLASROHR 6.3A 10ST SICHERUNG 5X20 FLINK GLASROHR 3.15A 10ST SICHERUNG 5X20 FLINK GLASROHR 50MA 10ST SICHERUNG 5X20 FLINK GLASROHR 5A 10ST SICHERUNG 5X20 FLINK GLASROHR 1A 10ST SICHERUNG 5X20 FLINK GLASROHR 1A0ST SICHERUNG 5X20 FLINK GLASROHR 2A 10ST SICHERUNG 5X20 FLINK GLASROHR0ST
|
Littelfuse, Inc. Advanced Interconnections, Corp.
|
502/M-M5-15 503-M6 1535 501-M4 503/M-M6-25 1481/M- |
GERAETEKNOPF GEWINDEZAPFEN M5 10ST Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits GERAETEKNOPF INNENGEWINDE M4 10ST KREUZKNOPF M5X20 10ST GERAETEKNOPF GEWINDEZAPFEN M8 10ST STELLKNOPF DM40 BOHRUNG 6 STELLKNOPF DM40 BOHRUNG 6 GERAETEKNOPF INNENGEWINDE M5 10ST GERAETEKNOPF INNENGEWINDE M50ST Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits GERAETEKNOPF INNENGEWINDE M60ST
|
Keystone Electronics, Corp.
|
M48Z2M1Y M48Z2M1Y-70PL1 M48Z2M1Y-70PL9 M48Z2M1YPL |
16 Mb (2Mb x 8) ZEROPOWER SRAM 122 x 32 pixel format, Compact LCD size 16 Mb 2Mb x 8 ZEROPOWER SRAM
|
SGS Thomson Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M28W320ECB85N6E M28W320ECT10N6E M28W320ECT70N6E M2 |
32 Mbit (2Mb x16/ Boot Block) 3V Supply Flash Memory 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位(处理器x16插槽,引导块V电源快闪记忆
|
ST Microelectronics STMicroelectronics N.V.
|
GS72116J-15 GS72116U-15I GS72116TP-15I GS72116J-8I |
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 15 ns, PDSO44 128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 15 ns, PBGA48 128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 8 ns, PDSO44 128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 8 ns, PQFP44 128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 10 ns, PQFP44 128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 12 ns, PBGA48 128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
GSI Technology, Inc.
|
MT58L64L32D MT58L64L36D |
(MT58LxxxLxxD) 2Mb SRAM
|
Micron Semiconductor
|
M27V322-100B1 M27V322-100B6 M27V322-100F1 M27V322- |
32 Mbit (2Mb ×16) low-voltage UV EPROM and OTP EPROM 32 Mbit (2Mb ?16) low-voltage UV EPROM and OTP EPROM 32 Mbit (2Mb 隆驴16) low-voltage UV EPROM and OTP EPROM 32 Mbit (2Mb 】16) low-voltage UV EPROM and OTP EPROM
|
STMicroelectronics
|