PART |
Description |
Maker |
S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
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Hamamatsu Photonics
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IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB
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IRF[International Rectifier] International Rectifier, Corp.
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IRFI830G IRFI830GPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=3.1A) HEXFET? Power MOSFET Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=3.1A) Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)\u003d 1.5ohm,身份证\u003d 3.1A
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IRF[International Rectifier] International Rectifier, Corp.
|
IRF5802 IRF5802TR |
150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Power MOSFET(Vdss=150V, Id=0.9A) Power MOSFET(Vdss=150V/ Id=0.9A) 0.9 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
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IRF[International Rectifier]
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IRFR4104PBF IRFU4104PBF IRFR4104TRL IRFR4104TRR |
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mΩ , ID = 42A ) HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mヘ , ID = 42A ) 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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International Rectifier
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IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A) HEXFET? Power MOSFET Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A) N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) Advanced Process Technology
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IRF[International Rectifier]
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IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五(巴西)直|4A条(丁)|63AB
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IRF[International Rectifier] International Rectifier, Corp.
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IRF5210 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A) Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
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IRF[International Rectifier]
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IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
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IRF[International Rectifier]
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IRFI734G IRFI734 |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=450V Rds(on)=1.2ohm Id=3.4A) Power MOSFET(Vdss=450V, Rds(on)=1.2ohm, Id=3.4A)
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IRF[International Rectifier]
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IRFIBC20G IRFIBC20 IRFIBC20GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=1.7A) Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)
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IRF[International Rectifier]
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