| PART |
Description |
Maker |
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory
32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
| MB84VD22182EE-90-PBS MB84VD22184EE-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| MB84VD22081EA-90-PBS MB84VD22082EA-90-PBS MB84VD22 |
32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 2M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| LHF32KZ5 |
32M Flash Memory
|
SHARP
|
| LH28F320BFB-PTTL60 |
32M (x16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| LHF00L11 |
Flash Memory 32M (2MB x 16)
|
Sharp Microelectronics
|
| LHF00L09 |
Flash Memory 32M (2MB x 16)
|
Sharp Microelectronics
|
| LH28F320BFHG-PBTLZN |
32M (x16) Flash Memory
|
Sharp Electrionic Components
|
| LH28F320BFHE-PBTLZ2 |
32M (x16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
