| PART |
Description |
Maker |
| BD165 BD169 |
Plastic Medium Power Silicon NPN Transistor
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BD190 BD186 BD188 |
PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MJE344 |
Plastic NPN Silicon Medium-Power Transistors
|
New Jersey Semi-Conduct...
|
| 2N4920G 2N4918 2N4918_04 2N4919 2N4920 |
Medium-Power Plastic PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| BD680AG |
Plastic Medium-Power Silicon PNP Darlingtons
|
ON Semiconductor
|
| 2N4920 |
MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| MJE10B3 MJE1093PNP MJE2090 MJE2103 MJE2100 MJE2102 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| BD439 BD441 BD435 BD437 BD437G BD437T |
Plastic Medium Power Silicon NPN Transistor
|
ONSEMI[ON Semiconductor]
|
| TIP105-13 |
PNP Plastic Medium-Power Silicon Transistors
|
Micro Commercial Compon...
|
| BDX53B-D |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
