| PART |
Description |
Maker |
| SUP40N06-25L SUB40N06-25L |
N-Channel Enhancement-Mode MOSFETs, Logic Level
N-Channel 60-V (D-S), 175 Degrees Celcious MOSFET, Logic Level
|
VISAY[Vishay Siliconix]
|
| FDD24AN06LA0 |
60V N-Channel Logic Level PowerTrench MOSFET
N CHANNEL LOGIC LEVEL POWER TRENCH MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDP7030BL FDB7030BL FDP7030 FDB7030BLNL |
N-Channel Logic Level PowerTrenchTM MOSFET
N-Channel Logic Level PowerTrench MOSFET 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| SUD23N06-31L |
TERMINAL IGBT模块
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
N-Channel 60-V (D-S) 175C MOSFET, Logic Level
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| FDS894910 FDS8949 FDS8949-F085 |
Dual N-Channel Logic Level PowerTrench MOSFET
Dual N-Channel Logic Level PowerTrench垄莽 MOSFET
Dual N-Channel Logic Level PowerTrench庐 MOSFET
Dual N-Channel Logic Level PowerTrench? MOSFET
|
Fairchild Semiconductor
|
| FQS4900 FQS4900TF |
Dual N & P-Channel/ Logic Level MOSFET
Dual N & P-Channel, Logic Level MOSFET
Dual N-Channel 60V & P-Channel 300V QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| PSMN9R0-25MLC PSMN9R0-25MLC-15 |
N-channel 25 V 8.65 mili ohm logic level MOSFET in LFPAK33
N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
|
NXP Semiconductors
|
| PSMN010-55D |
N-channel logic level TrenchMOS(tm) transistor
N-channel logic level TrenchMOS TM transistor
N-channel logic level TrenchMOS transistor(N沟道逻辑电平 TrenchMOS晶体
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BUK9614-55A BUK9514-55A |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 35x25 mm; Packaging: Bulk
TrenchMOS logic level FET
TrenchMOS TM logic level FET
TrenchMOS(tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
