| PART |
Description |
Maker |
| HY62SF16403ALLM-10 HY62SF16403ALLM-10I HY62SF16403 |
x16 SRAM
x16|1.8V|85/100|Super Low Power Slow SRAM - 4M x16 | 1.8 | 85/100 |超级低功耗SRAM的速度 4
|
Alpha Industries, Inc.
|
| HY62LF16404C HY62LF16404C-I |
x16|2.5V|70/85|Super Low Power Slow SRAM - 4M x16 | 2.5V的| 70/85 |超级低功耗SRAM的速度 4
256Kx16bit full CMOS SRAM
|
Alpha Industries, Inc.
Hynix Semiconductor
|
| HY62UF16806B-DFC HY62UF16806B-DFI HY62UF16806B-C H |
x16|3V|55/70/85|Super Low Power Slow SRAM - 8M x16 | 3V的| 55/70/85 |超级低功耗SRAM的速度 800
512Kx16bit full CMOS SRAM
|
GE Security, Inc.
Hynix Semiconductor
|
| MB84SD23280FE-70 MB84SD23280E-70PBS MB84SD23280FA |
64M (X16) FLASH MEMORY 8M (X16) SRAM
|
SPANSION[SPANSION]
|
| M36WT8B10ZA6T M36WT8B70ZA6T M36WT864T70ZA6T M36WT8 |
HEATSHRINK BLACK 4IN X 50FT 64兆位4Mb的x16插槽，多银行，突发闪存和8兆位的SRAM12k x16，内存产品多
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product 64兆位4Mb的x16插槽，多银行，突发闪存和8兆位的SRAM12k x16，内存产品多
|
STMicroelectronics N.V.
意法半导
|
| WMS256K16-20DLM WMS256K16-25DLM WMS256K16-35DLM WM |
20ns; 256K x 16 monilithic SRAM, SMD 5962-96902
x16 SRAM
|
White Electronic Designs
|
| CY62136BV18LL-70BAI CY62136BV18LL-70BAIT |
x16 SRAM x16的SRAM
128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| HM62W1664HBJP-25 HM62W1664HBJP30 |
x16 SRAM
CACHE SRAM, PDSO44
|
|
| M36W432TG70ZA1T M36W432TG85ZA6T M36W432TG-ZAT M36W |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
意法半导
|
| M36DR432-ZAT M36DR432A100ZA6T M36DR432A100ZA6C M36 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和4兆位256K x16的SRAM，多个存储产
|
意法半导
STMicroelectronics N.V.
|
