| PART |
Description |
Maker |
| IDT71T75602S133BG IDT71T75802S200BG IDT71T75802S20 |
512K x 36/ 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
512K x 36, 1M x 18 2.5V Synchronous ZBT?/a> SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
BULK COAXIAL CABLE; RE-SHAPABLE VERSION OF PE-047SR
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 4.2 ns, PQFP100
High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.2 ns, PBGA119
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 3 ns, PQFP100
Current-Mode PWM Controller 14-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.8 ns, PQFP100
Current-Mode PWM Controller 8-PDIP -40 to 85 1M X 18 ZBT SRAM, 3.5 ns, PQFP100
Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 5 ns, PQFP100
|
IDT
Integrated Device Technology, Inc.
SRAM
|
| DS1863E DS1863ER DS1863ET DS1863 DS26522 DS26522G |
Dual T1/E1/J1 Transceiver
Burst-Mode PON Controller With Integrated Monitoring
|
MAXIM[Maxim Integrated Products]
|
| STLC5412 |
2B1Q U INTERFACE DEVICE ENHANCED WITH DECT MODE
|
ST Microelectronics
|
| MA02203AD-R7 MA02203AD MA02203AD-R13 |
3.6 V, 450 mW DECT RF Power Amplifier IC 3.6 V的，450毫瓦的DECT射频功率放大器IC
100mA Negative uCap LDO Regulator
3.6 V / 450 mW DECT RF Power Amplifier IC
|
NXP Semiconductors N.V.
MACOM[Tyco Electronics]
|
| UAA3545 UAA3545HL UAA3545HL/C1 |
UAA3545; Fully integrated DECT transceiver
Fully integrated DECT transceiver TELECOM, CORDLESS, RF AND BASEBAND CIRCUIT, PQFP32
|
Philips
NXP Semiconductors N.V.
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| LT-74E73E-PG |
3.3V, 1.25 Gbps 1490 nm Continuous-Mode TX / 1.25 Gbps 1310 nm Burst-Mode RX 2X5 SFF Package, GE-PON OLT Transceiver (IEEE 802.3ah-2004 1000BASE PX20)
|
Optoway Technology Inc.
|
| TEA1723AT |
HV start-up flyback controller with integrated MOSFET for 11 W applications, 430 Hz burst frequency
HV start-up flyback controller with integrated MOSFET for 11 W applications, f~burst = 430 Hz
|
NXP Semiconductors
|
| TEA1723BT |
HV start-up flyback controller with integrated MOSFET for 11 W applications, 905 Hz burst frequency
HV start-up flyback controller with integrated MOSFET for 11 W applications, f~burst = 905 Hz
|
NXP Semiconductors
|
