| PART |
Description |
Maker |
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| CFH2162-P1 CFH2162-P109 |
800 to 900 MHz 36 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| TIM1414-5-252 |
POWER GAAS FET
|
Toshiba Corporation
|
| MGF0907B1 MGF0907B_1 MGF0907B |
L,S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HWL30NPA HWL30NPA-V1-15 |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| TIM7785-45SL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM5053-4SL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| HWL26NPB |
L-Band GaAs Power FET
|
Hexawave, Inc
|
