| PART |
Description |
Maker |
| RIVA128ZX-STG3005A2S RIVA-128ZX |
128-BIT 3D MULTIMEDIA ACCELERATOR
128-BIT 3D MULTIMEDIA ACCELERATOR
|
SGS Thomson Microelectronics
ST Microelectronics
|
| S29PL-N07 S29PL127N65GFW000 S29PL129N65GFW000 S29P |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| S29PL129N70FFW002 S29PL127N65GFIW02 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| M34C00MN M34C00 M34C00DW M34C00-WDW6T M34C00-WMN6T |
SWITCH TACT 6MM SQ L=5.85MM160GF
3 X 128 BIT SERIAL I²C BUS EEPROM FOR EE-TAGS
From old datasheet system
3 X 128 BIT SERIAL I2C BUS EEPROM FOR EE-TAGS
3 x 128 bit Serial I?C Bus EEPROM For ee-Tags
3 x 128 bit Serial I2C Bus EEPROM For ee-Tags
3 X 128 BIT SERIAL I²C BUS EEPROM FOR EE-TAGS
3 x 128 bit Serial IC Bus EEPROM For ee-Tags
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AM29LV128LH103EI AM29LV128LH103FI AM29LV128LH103PC |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 110ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 120ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 90ns
|
Advanced Micro Devices
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| NJU6680 |
128-common × 128-segment 4-level Gray Scale BITMAP LCD DRIVER
|
New Japan Radio
|
| SS0520 SS0520-T1 SS0520-T3 SS0530-T1 SS0540-T3 SS0 |
128 x 128 pixel format, LED or EL Backlight available
SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| BAS19-T1 BAS19-T3 BAS19 BAS21-T3 BAS20-T1 BAS20-T3 |
SURFACE MOUNT FAST SWITCHING DIODE 表面贴装快速开关二极管
128 x 128 pixel format, LED or EL Backlight available
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| HDM128GS12-1 |
128 X 128 Dots Graphic, Small Size
|
Hantronix,Inc
|
