PART |
Description |
Maker |
MT5C6405 5962-8685911LA 5962-8685911UA 5962-868591 |
16K x 4 SRAM SRAM MEMORY ARRAY
|
http:// List of Unclassifed Manufacturers ETC[ETC]
|
MT5C6401C-20L_IT MT5C6401C-45L_IT MT5C6401C-55L_XT |
64K x 1 SRAM SRAM MEMORY ARRAY
|
Austin Semiconductor
|
MT5C2564C-25_IT MT5C2564C-25_XT MT5C2564C-25L_883C |
64K x 4 SRAM SRAM MEMORY ARRAY
|
Austin Semiconductor
|
MT5C2561C-70L/883C MT5C2561EC-70L/883C MT5C2561C-3 |
MT5C2561 SRAM MEMORY ARRAY
|
Austin Semiconductor
|
LC361000AMLL LC361000ARLL-10 LC361000ARLL-70 LC361 |
1 MEG (131072 words X 8 bits) SRAM 1迈可31072字8位)的SRAM 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7 |
From old datasheet system 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44 Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 |
8K X 8 STANDARD SRAM, 55 ns, CDFP28 8K X 8 STANDARD SRAM, 55 ns, CDIP28 32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷 4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 64 Mb (4M x 16) Boot Sector, Flash Memory SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
|
Maxim Integrated Products, Inc.
|
MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
DS2229 DS2229-85 |
Word-Wide 8 Meg SRAM Stik
|
Dallas Semiconducotr MAXIM - Dallas Semiconductor
|