| PART |
Description |
Maker |
| CM800E2C-66H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
|
| CM400HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM900HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CF5020ALC CF5020ALA CF5020ALA-2 CF5020ALB CF5020AL |
High-Frequency, 3rd Overtone Crystal Oscillator Module ICs
|
Seiko NPC Corporation
NPC[Nippon Precision Circuits Inc]
|
| SXL-316-TR2 SXL-316-BLK |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: 52dBm typ. at 850 MHz. Devices per reel 1000. Reel size 13
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: 52dBm typ. at 850 MHz. Devices per reel 100/TRAY.
|
Stanford Microdevices
|
| CM400HB-90H |
Single IGBTMOD?/a> HVIGBT 400 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 400 Amperes/4500 Volts
Single IGBTMOD HVIGBT 400 Amperes/4500 Volts
Single IGBTMODHVIGBT 400 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| QID3350001 |
Dual IGBT HVIGBT Module 500 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
| QID4515002 |
Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts
|
Powerex Power Semiconductors
|
