| PART |
Description |
Maker |
| NNCD6.8J NNCD16J NNCD18J NNCD8.2J NNCD5.6J NNCD10J |
ESD NOISE CLIPPING DIODE 防静电噪音裁剪二极管
ESD noise clipping diode 2pin XSOF (flat type)
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NNCD5.6MG NNCD6.2MG NNCD6.8MG NNCD6.2MG-T1 NNCD6.2 |
ESD noise clipping diode 5pin SC-74A Low capacitance,Hi ESD type
LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD 低电容高ESD静电放电噪音型裁剪二极管季刊类型：共阳极5针迷你模
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| HBAT-5400 HBAT-5400-BLK HBAT-5402 HBAT-5402-BLK HB |
High Performance Schottky Diode for Transient Suppression
HBAT-5402 · Clipping/clamping diode
HBAT-5400 · Clipping/clamping diode
HBAT-540C · Clipping/clamping diode
HBAT-540B · Clipping/clamping diode
|
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| NNCD5.6LH NNCD6.2LH NNCD6.8LH |
2 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD 低电容式静电放电噪声裁剪二极管季刊类型：共阳引脚超小微型模具
|
NEC, Corp.
NEC Corp.
|
| NNCD5.1D NNCD5.6D NNCD6.2D NNCD6.8D NNCD4.3D NNCD4 |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE 静电放电二极管噪声裁剪式200毫瓦
|
http://
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| CPDF12V0U-HF |
Halogen Free ESD Diodes, V-C=24V, V-ESD=30kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDZ9V0U-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=30kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDUR9V0LP-HF |
Halogen Free ESD Diodes, V-C=16V, V-ESD=8kV
Low Capacitance ESD SMD Protection Diode
|
Comchip Technology
|
| CPDUR5V0C-HF |
Halogen Free ESD Diodes, V-C=14.5V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDUR12V CPDUR24V CPDUR5V0 |
ESD Suppressor Diodes, V-C=15V, V-ESD=8kV
ESD Suppressor Diodes, V-C=47V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| SSM6N29TU |
High-Speed Switching Applications
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 1.9 to 2.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Semiconductor
Toshiba Corporation
|
| TMP87C809BNG TMP87C409BNG TMP87C409BMG TMP87C809BM |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.2 to 7.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.0 to 7.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.3 to 7.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
