| PART |
Description |
Maker |
| SSP4N60AS |
Advanced Power MOFET
|
Samsung Electronics
|
| SSP4N60AS SSP4N60ASJ69Z |
4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
Advanced Power MOFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
| W65C832PL-10 W65C832PL-6 W65C832PL-4 W65C832PL-8 W |
ADVANCED CMOS DESIGN FOR LOW POWER POWER CONSUMPTION AND INCREASED NOISE IMMUNITY
|
List of Unclassifed Manufacturers
|
| UF634L-TF1-T UF634L-TA3-T |
ADVANCED POWER MOSFETADVANCED POWER MOSFET
|
Unisonic Technologies
|
| IRFU410A |
Advanced Power MOSFET
|
Fairchild Semiconductor
|
| AP2322GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| SFS2955 |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS630A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SFS9510 |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
