| PART |
Description |
Maker |
| CIL10NR82K CIL10NR82M CIL10J1R2M CIL10J1R0M CIL10J |
Chip Inductor CIL Series General Type
|
Samsung semiconductor
|
| BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| FB43-226-RC FB43-110-RC FB43-422-RC FB73-422-RC FB |
Ferrite Bead Inductor; Ferrite Grade:43; Cable Diameter Max:0.06"; Features:Excellent EMI suppression capability at high frequency; Frequency Max:200MHz; Frequency Min:40MHz; Leaded Process Compatible:Yes; Series:FC FB 1 FUNCTIONS, FERRITE BEAD
|
Bourns Electronic Solutions
Bourns, Inc.
|
| SFH2030F SFH2030 SFH203FA Q62702-P955 Q62702-P956 |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silizium Fotodiode麻省理工sehr库泽Schaltzeit Silizium Fotodiode麻省理工Tageslichtsperrfilter
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| CER0017A |
Excellent Rejection
|
CTS Corporation
|
| SMQ-C52 |
Excellent Performance
|
SYNERGY MICROWAVE CORPO...
|
| IPD040N03LG IPS040N03LG |
OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS庐3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| STD15N65M5 |
Excellent switching performance
|
STMicroelectronics
|
| TND027SW |
Excellent Power Device
|
Sanyo Semicon Device
|
| TND314S |
Excellent Power Device
|
ON Semiconductor
|
| MC1554G |
excellent gain-temperature stability
|
Harris Corporation
|
| 2089-6804-00 2089-6406-00 2089-6210-00 |
Excellent Amplitude and Phase Balance
|
M/A-COM Technology Solu...
|
