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T308N20TOC - 2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier

T308N20TOC_161602.PDF Datasheet


 Full text search : 2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
 Product Description search : 2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier


 Related Part Number
PART Description Maker
T308N2000TOF 2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
Telefunken Electronic
BY329X-1000 BY329X-1200 BY329F BY329F-B1200 BY329 Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Rectifier diodes fast/ soft-recovery
Rectifier diodes fast, soft-recovery
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
STK11C68-W30 STK11C68-W45 STK11C68-W45I STK11C68-C Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:8A; Holding Current:50mA
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Current, It av:15A; Holding Current:70mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Package/Case:TO-3; Current, It av:25A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:30mA
NVRAM (EEPROM Based) NVRAM中(EEPROM的基础
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes
Electronic Theatre Controls, Inc.
NTE5585 NTE5580 NTE5582 NTE5584 Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A.
Silicon Controlled Rectifier for Phase Control Applications
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
NTE[NTE Electronics]
HC8 8.0kV 1.0A HIGH VOLTAGE DIODES
getedz electronics
HVRW2 2.0kV 1.5A HIGH VOLTAGE DIODE
getedz electronics
LY3 LY4N LY1 LY2 LY4S LY1-0 LY1-CR LY1-D LY1F LY1L    General Purpose Relay
Metal Oxide Resistor; Series:MP800; Resistance:0.020ohm; Resistance Tolerance: /- 5 %; Power Rating:20W; Temperature Coefficient:0 to 300 ppm/ C; Terminal Type:Radial Leaded; Package/Case:2-TO-220; Voltage Rating:300V 通用继电
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:50mA; Current, It av:40A; Forward Current:40A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes 通用继电
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:10; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 通用继电
General Purpose Relay 通用继电
RES 1206 475R 0.125W 1% 200V 100PPM/C
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:50mA; Current, It av:40A; Forward Current:40A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Power Thick Film Resistor; Series:MK; Resistance:2Mohm; Resistance Tolerance: 1%; Power Rating:0.75W; Operating Temperature Range:-55 C to C
International Rectifier, Corp.
Omron Electronics, LLC
OMRON[Omron Electronics LLC]
http://
ESJA08-08 8.0kV 5mA HIGH VOLTAGE DIODES
getedz electronics
ESJA08-04-17 5.0mA 4.0kV 80nS-- High Voltage Diodes
GETAI ELECTRONICS DEVIC...
BDW21A SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
Bipolar NPN Device in a Hermetically sealed TO3
Glenair, Inc.
Seme LAB
 
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