| PART |
Description |
Maker |
| MCP2150 MCP2120 |
DEVELOPER’S KIT USER’S GUIDE
DEVELOPERS KIT USERS GUIDE
|
MICROCHIP[Microchip Technology]
|
| DN8797MS |
3 V operation Hall IC, One-way magnetic field operation
|
Panasonic
|
| 79530-5000 79530-5001 79530-5002 79530-5003 |
MicroCross垄芒 ADD2 DVI Card User Guide
MicroCross ADD2 DVI Card User Guide
|
Molex Electronics Ltd.
|
| 1N3305 1N3307B 1N3312B 1N3323B 1N3314B 1N3310B 1N3 |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 22 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 140 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 10 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
Zener Voltage Regulator Diode 齐纳稳压二极
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 9.1 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 160 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
SILICON 50 WATT ZENER DIODES
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
|
TE Connectivity, Ltd.
Hammond Manufacturing Co., Ltd.
STMicroelectronics N.V.
B＆K Precision, Corp.
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| MN101C35D MN101C35 |
Microcomputer - 8bit - General Purpose
The lower limit for operation guarantee for EPROM built-in type is 2.7 V
From old datasheet system
Lower limit for operation guarantee for EPROM built-in is 2.7V
|
Panasonic Semiconductor
Matsushita Electric
Panasonic Corporation
|
| AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只，同时作业快闪记忆
|
Advanced Micro Devices, Inc.
http://
|
| MBM29DL161BE MBM29DL161BE-12 MBM29DL161BE-70 MBM29 |
16M (2MX8/1MX16) BIT DUAL OPERATION
16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MBM29DL323BE90PBT MBM29DL323BE90TN MBM29DL323BE90T |
2M X 16 FLASH 2.7V PROM, 120 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 80 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
TVS UNIDIRECT 600W 51V SMB 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
MICRO SINGLE MODE FIBER TRANCEIVER, ST 32M的（4米8/2M × 16）位双操
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
32M (4M x 8/2M x 16) BIT Dual Operation 32M的（4米8/2M × 16）位双操
KPT 6C 6#20 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 PORT MODULAR SWITCH ROHS VERSION
LE1416A BLANK FACE PLATE
4 PORT 100 MB SINGLE-MODEFIBER
XSNT SUPPR,ESD,060.00V,0603
MULTI-WAY IEC PANEL OUTLET
8 PORT MODULAR SWITCH
PCI 10BASE T/10 BASE FL NIC, S
TVS UNI-DIR 43V 600W SMB
|
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
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