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A43L8316V-10 - 128K X 16 Bit X 2 Banks Synchronous DRAM

A43L8316V-10_164493.PDF Datasheet


 Full text search : 128K X 16 Bit X 2 Banks Synchronous DRAM
 Product Description search : 128K X 16 Bit X 2 Banks Synchronous DRAM


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A43L8316AV-5.5 AMICTECHNOLOGYCORPORATION-A43L8316A 128K X 16 Bit X 2 Banks Synchronous DRAM 128K的16位2银行同步DRAM
AMIC Technology Corporation
AMIC Technology, Corp.
28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF 1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位)的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位)的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
CONNECTOR ACCESSORY
POT 100K OHM THUMBWHEEL CERM ST
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NXP Semiconductors N.V.
Maxwell Technologies, Inc
KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-10 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
Samsung semiconductor
72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF 1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4,银
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Maxwell Technologies, Inc
IS42S16128-8T IS42S16128-12T Chassis Mount and Din Rail Filters RoHS Compliant: Yes
128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution, Inc.
DRAM
PDM41024 PDM41024LA10SO PDM41024LA10SOATR PDM41024 1 MEGABIT STATIC RAM 128K X 8-BIT
128K X 8 STANDARD SRAM, 15 ns, PDSO32
List of Unclassifed Man...
List of Unclassifed Manufacturers
ETC[ETC]
IXYS CORP
AT49F2048 AT49F2048-12RC AT49F2048-12RI AT49F2048- 2-Megabit 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 120 ns, PDSO44
Serial-To-Parallel Interface 20-TSSOP -40 to 85 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
Dual 16-Bit Binary Counters with 3-State Output Registers 20-PDIP -40 to 85
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 From old datasheet system
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作)
128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
MX27C1000PI-70 MX27C1000QI-70 MX27C1000MI-55 MX27C Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
Single Output LDO, 3.0A, Fixed(2.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
FPGA - 200000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 128K X 8 OTPROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 70 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 120 ns, PQCC32
Macronix International Co., Ltd.
MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
Micron Technology
IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
TC55V4376FF-83 128K Word x 36 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?36浣??姝ョ?????查???RAM)
Toshiba Corporation
 
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