| PART |
Description |
Maker |
| 3VD182600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD395600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD395650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD499650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD250600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD297650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 1206SXXX 1808AXXX 2225AXXX 2220GXXX 1825CXXX 2220H |
High Voltage MLC Chips
|
AVX Corporation
|
| LDD-E304NI |
0.30 SEVEN SEGMENT, DUAL DIGIT DISPLAY, 635nm RED CHIPS, GRAY FACE WITH WHITE SEGMENTS, COMMON ANODE, NO CHIPS IN DECIMALS.
|
List of Unclassifed Manufacturers
|
| IRFP151 IRFP153 IRFP152 IRF150 IRF152 IRFP150 IRFC |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
|
International Rectifier
IXYS[IXYS Corporation]
|
| HCHP CHP |
High Stability Resistor Chips
|
Vishay Intertechnology
|
| OD-880-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
