| PART |
Description |
Maker |
| MH16S64APHB-6 MH16S64APHB-7 MH16S64APHB-8 |
1 /073 /741 /824-BIT (16 /777 /216 - WORD BY 64-BIT)Synchronous DRAM
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM 1073741824位（16,777,216 -文字4位）同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MH16D64AKQC-75 MH16D64AKQC-10 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M29GB161BVP M5M29WT160BVP M5M29GT161BVP M5M29GT1 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16,777,216位（2097,152 - Word 1048,576字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MH16S72PHB-6 B99032 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
From old datasheet system
1 /207 /959 /552-BIT ( 16 /777 /216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S72DCFA-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16S72AVJB-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB_T166S4BWG M6MGB E99008_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
|
Mitsubishi
|
| MH16S72BCFA-6 B99036 |
From old datasheet system
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M29GB |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Corporation
|
| PD42S65405 PD4264405 |
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 动态RAM) 16,777,216词由4位的CMOS动态存储器（RAM400动态）
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M ?ㄦ?RAM)
|
NEC, Corp.
NEC Corp.
|
| THMY641661BEG THMY641661BEG-10 THMY641661BEG-80 |
16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE
16/777/216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| AK59256 |
16,777,216 Word by 9 Bit CMOS Dynamic Random Access Memory
|
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