PART |
Description |
Maker |
QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
OP168F OP268FB OP268FPS OP268FA OP268FC OP269A OP2 |
Plastic Infrared Emitting Diode 0.76 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
TT electronics OPTEK Technology OPTEK TECHNOLOGY INC
|
ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp. AVAGO TECHNOLOGIES LIMITED
|
Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器,红外Lumineszenzdiode GaAlA红外发射 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
TLN201 |
INFRARED LED GAA AS INFRARED ENITTER
|
Toshiba Corporation Toshiba Semiconductor
|
MIE-546A2U 546A2U |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (UL Listed)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-334H4 334H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
IR26-51C IR26-51C_L110_TR8 IR26-51C/L110/TR8 IR26- |
1 ELEMENT, INFRARED LED, 940 nm 1.6mm round Subminiature Side Looking Infrared LED
|
EVERLIGHT ELECTRONICS CO LTD Everlight Electronics Co., Ltd
|
MIE-144G1 144G1 |
Infrared Emitting Diodes (IRED) GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|