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HY27USXXX - (HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存

HY27USXXX_144462.PDF Datasheet

Part No.

HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27US16121M HY27SS08121M

Description

(HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存

File Size

731.68K / 43 Page

Maker

Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: HY27US08121M

Maker: HY

Pack: TSOP

Stock: Reserved

Unit price for :

50: $8.31

100: $7.89

1000: $7.48

Email: oulindz@gmail.com

Contact us

Homepage

http://www.hynix.com/eng/

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Full text search : (HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存

Related Part Number

PART	Description	Maker
HY27US08121M HY27US16121M HY27USXXX HY27SS08121M H	512Mbit (64Mx8bit / 32Mx16bit) NAND Flash	HYNIX[Hynix Semiconductor]
HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2	Unbuffered DDR SDRAM DIMM 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 32Mx64\|2.5V\|M/K/H/L\|x8\|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 \| 2.5V的\| /升\| x8 \| DDR SDRAM内存- 256MB的无缓冲DIMM	Hynix Semiconductor http://
HYB25D512800AT-7F	512Mbit Double Data Rate SDRAM	Infineon Technologies A...
H5MS5122DFR H5MS5132DFR	Mobile DDR SDRAM 512Mbit (16M x 32bit)	Hynix Semiconductor
H55S5122DFR-60M H55S5122DFR-75M H55S5122DFR-A3M H5	512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O	Hynix Semiconductor
HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF	512-Mbit DDR2 SDRAM 512Mbit Double Data Rate (DDR2) Component	Infineon Technologies A...
HY27US08121A HY27US16121A HY27SS08121A HY27SS16121	512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 3.3V PROM, 30 ns, PBGA63	Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	Numonyx B.V
K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4	; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM 512Mbit gDDR2 SDRAM	http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
TH58512FTI	A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)	Toshiba Corporation

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