| PART |
Description |
Maker |
| 6N40 6N40L-TF3-T 6N40G-TF3-T |
6 Amps, 400 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MTW16N40E-D |
Power MOSFET 16 Amps, 400 Volts N-Channel TO-247
|
ON Semiconductor
|
| SDR8400S4 |
400 AMPS 400 - 1200 VOLTS 15 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3
Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
20V P-ch HD3e SOT223
|
ONSEMI
ON Semiconductor
|
| MGSF2N02E MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 |
2.8 Amps, 20 Volts, N−Channel SOT−23 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB
2.8 Amps, 20 Volts, N-Channel SOT-23
2.8 Amps, 20 Volts, N−Channel SOT−23
Power MOSFET 2.8 Amps, 20 Volts
|
ONSEMI[ON Semiconductor]
|
| NGB18N40ACLBT4G |
Ignition IGBT 18 Amps, 400 Volts
|
ON Semiconductor
|
| NGB8204ANT4G NGB8204N11 |
Ignition IGBT 18 Amps, 400 Volts
|
ON Semiconductor
|
| 2N2323 2N2322 2N2324 2N2325 2N2326 |
SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
|
Central Semiconductor Corp
Central Semiconductor C...
|
| CS55B CS55D |
SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS
|
CENTRAL[Central Semiconductor Corp]
|
| SDR1004F SDR1010F SDR1008F SDR1006F |
100 AMPS, 400-1000 VOLTS 270 nsec FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| NTP85N03 NTB85N03 NTB85N03T4 |
Power MOSFET 85 Amps / 28 Volts
Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
|
ONSEMI[ON Semiconductor]
|
| SDR8200S8 SDR8200S10 SDR8200S12 SDR8200S4 SDR8200S |
200 AMPS 400 - 1200 VOLTS 15 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
