| PART |
Description |
Maker |
| KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| DSK6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG
|
| DSK6F3216T6M K6F3216T6M K6F3216T6M-F DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6F2016U4E K6F2016U4E-F DSK6F2016U4E DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6F1616T6C-FF55 K6F1616T6C K6F1616T6C-F K6F1616T6C |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 100万x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6F1616T6B-TF70 K6F1616T6B-TF55 K6F1616T6B K6F1616 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 100万x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| HY62SF16403ALLM-10 HY62SF16403ALLM-10I HY62SF16403 |
x16 SRAM
x16|1.8V|85/100|Super Low Power Slow SRAM - 4M x16 | 1.8 | 85/100 |超级低功耗SRAM的速度 4
|
Alpha Industries, Inc.
|
| K6F1616R6C K6F1616R6C-FF70 K6F1616R6C-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6F1616U6A K6F1616U6A-EF55 K6F1616U6A-EF70 K6F1616 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
| HY62LF16406D-SF HY62LF16406D-SFI HY62LF16406D-DF H |
256Kx16bit full CMOS SRAM
x16 SRAM
x16|2.5V|70/85|Super Low Power Slow SRAM - 4M x16 | 2.5V的| 70/85 |超级低功耗SRAM的速度 4
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
