| PART |
Description |
Maker |
| 1MBC05-060 |
Fuji Discrete Package IGBT
|
Fuji Electric
|
| 1MB03D-120 |
Fuji Discrete Package IGBT
|
Fuji Electric
|
| 1MBH50-060 |
Fuji Discrete Package IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1MB30-060 |
Fuji Discrete Package IGBT 48 A, 600 V, N-CHANNEL IGBT, TO-3P
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| OM6517SA OM6517SW |
1200V DISCRETE Hi-Rel IGBT in a D3 package
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
|
International Rectifier
List of Unclassifed Manufacturers
|
| IRG4BC40WS IRG4BC40WL |
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package
600V Warp 60-150 kHz Discrete IGBT in a D2Pak package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| 1MBH10D-060 |
Ratings and characteristics of Fuji IGBT 30 A, 600 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| IRGBC20S |
600V Discrete IGBT in a TO-220AB package
|
International Rectifier
|
| IRGBC40S |
600V Discrete IGBT in a TO-220AB package
|
International Rectifier
|
