| PART |
Description |
Maker |
| AT49BV512-12JC AT49BV512-12JI AT49BV512-12PC AT49B |
512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory 64K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| CAT93C5711PI-45TE13 CAT93C5621PI-45TE13 CAT93C4621 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
BCD Semiconductor Manufacturing, Ltd.
Atmel, Corp.
Amphenol, Corp.
|
| AT27BV512 AT27BV512-70TU AT27BV512-70RI AT27BV512- |
512K (64K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM
|
ATMEL Corporation
|
| AT28BV64B09 |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
| AT27BV512-12JC AT27BV512-12JI AT27BV512-12RC AT27B |
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SOIC -55 to 125 64K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-PDIP -55 to 125 64K X 8 OTPROM, 150 ns, PDSO28
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| 7C4282V/92V-15 7C4282V/92V-10 7C4282V/92V-25 |
64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion
64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion 64K/128Kx9低电压后同步FIFO的瓦重发
|
Cypress Semiconductor Corp.
|
| WU400 WU100 WU101 WU102 WU103 WU104 WU105 WU106 WU |
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -12.0 VDC. Output current -400 mA. Input current 10 mA(no load), 2520 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -15.0 VDC. Output current -333 mA. Input current 10 mA(no load), 2510 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 15.0 VDC. Output current 667 mA. Input current 10 mA(no load), 2510 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 3.3 VDC. Output current 3000 mA. Input current 10 mA(no load), 2470 mA(full load).
10/15 Watts WU Series 10/15瓦吴系列
Nickel Cadmium Battery; Voltage Rating:1.2V; Battery Size Code:Sub C; Battery Capacity:2100mAh
Nickel Cadmium Battery; Voltage Rating:1.2V; Battery Size Code:Sub C; Battery Capacity:1900mAh; Battery Terminals:Pressure Contact
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 5.0 VDC. Output current 2000 mA. Input current 10 mA(no load), 2620 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 12.0 VDC. Output current 800 mA. Input current 10 mA(no load), 2520 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -5.0 VDC. Output current -1000 mA. Input current 10 mA(no load), 2620 mA(full load).
|
XPiQ
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
International Power Sources
|
| 28LV64A-30I_P 28LV64A 28LV64A-20/SO 28LV64A-20/TS |
SENSOR, QUICK DISCONNECT WITH EUROFAST 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM(低压,64K CMOS 并行EEPROM) 64K的（8K的8）低电压的CMOS EEPROM的（低压4K的位，并行的CMOS EEPROM的）
Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| IDT7008L20J IDT7008L20JB IDT7008L20JI IDT7008S_L I |
64K x 8 Dual-Port RAM
From old datasheet system
IC,SRAM,64KX8,CMOS,LDCC,84PIN,PLASTIC
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, CPGA84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 55 ns, PQCC84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology Inc
Integrated Device Technology, Inc.
|
