| PART |
Description |
Maker |
| 2DI75M-120 |
POWER TRANSISTER MODULE
|
http://
FUJI[Fuji Electric]
|
| 2DI150M-050 |
POWER TRANSISTER MODULE
|
FUJI[Fuji Electric]
|
| 2SC1200 |
MICRO TRANSISTER
|
Toshiba Semiconductor
|
| 2SD2150 |
LOW FREQUENCY TRANSISTER
|
Galaxy Semi-Conductor H...
|
| C67076-A1053-A2 BSM191F |
SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode) 28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
SIMOPAC ? Module
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| S-AV17 E002849 |
RF POWER AMPLIFIER MODULE(HAM, VHF 50W FM RF POWER AMPLIFIER MODULE) 射频功率放大器模块（火腿，甚高频50瓦调频射频功率放大器模块
RF POWER AMPLIFIER MODULE(HAM/ VHF 50W FM RF POWER AMPLIFIER MODULE)
VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| BSM50GD120DN2 C67076-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
| APTGF100A120T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
