PART |
Description |
Maker |
M5M51016BRT-10VLL M5M51016BRT-10VL M5M51016BTP-10V |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-1048576-BIT CMOS STATICRAM
|
Mitsubishi Electric Corporation
|
LC378100QM LC378100QT |
8 MEG (1048576 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
|
SANYO[Sanyo Semicon Device]
|
HN62408 HN62408FP HN62408P |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM 524288字16-BIT/1048576-WORD × 8位CMOS掩膜可编程ROM
|
Hitachi,Ltd. Hitachi Semiconductor
|
GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
M5M5V108DFP-70H M5M5V108DKV-70H M5M5V108DVP-70H M5 |
1048576-bit (131072-word by 8-bit) CMOS static RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word8位)的CMOS静态RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs 256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE 256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE 256K (32768 words X 8 bits) SRAM Control Pins: OE and CE 256K (32768 words 8 bits) SRAM Control Pins: OE and CE SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC From old datasheet system
|
Intersil Sanyo Semiconductor Corp SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
M5M4V4405CTP-7S M5M4V4405CTP-6S |
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM 江户(超页模式)4194304位(1048576 - Word4位)动态随机存储器
|
Mitsubishi Electric, Corp.
|
KM44C16100B |
(KM44C16000B / KM44C16100B) 16M x 4bit CMOS Dynamic RAM
|
Samsung semiconductor
|
MB814405D-60L MB814405D-7OL |
1M ×4BIT
Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
A42L2604S-45L A42L2604S-50L A42L2604V-45L A42L2604 |
45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode 50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMIC Technology
|
MAX17605 MAX17601 MAX17603 MAX17600 MAX17602 CAT24 |
4A Sink /Source Current, 12ns, Dual MOSFET Drivers 2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保 1K/2K/4K/8K/16K SPI Serial CMOS EEPROM 1K/2K/4K/8K/16K SPI 串行 互补型金属氧化物 电可擦可编程只读存储 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS 16K-Bit Microwire Serial EEPROM 16K的位微型导线串行EEPROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
|
Maxim Integrated Products Atmel, Corp. ON Semiconductor TE Connectivity, Ltd.
|
TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY 65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
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ETC List of Unclassifed Manufacturers
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