| PART |
Description |
Maker |
| NAND01G-M NAND256-M |
(NANDxxx-M) NAND Flash Memories
|
ST Microelectronics
|
| NAND512W3A2CN6F NAND512W3A2CN6E |
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
Numonyx B.V
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| NAND16GAH0D NAND16GAH0DZA5F |
1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface
|
Numonyx B.V
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| NAND01G-M NAND256-M NAND256R3M0 NAND256R3M0AZB5E N |
SPECIALTY MEMORY CIRCUIT, PBGA149
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
|
NUMONYX
STMICROELECTRONICS[STMicroelectronics]
|
| AM75DL9608HGT70IT AM75DL9608HGT75IS AM75DL9608HGT7 |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 64兆位个M x 16位）2兆位米16位）.0伏的CMOS只，同时作业闪存，和
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc.
Xilinx, Inc.
Spansion, Inc.
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| LH28F160BGH-TL LH28F160BG-TL |
16 M-bit (1 MB x 16) Smart 3 Flash Memories
|
http://
Sharp Corporation
|
| S29NS032J0LBAW000 S29NS064J0LBAW000 S29NS128J0LBAW |
Burst Mode Flash Memories
|
SPANSION
|
| KM29W32000T |
4M x 8 Bit NAND Flash Memory(4M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
