| PART |
Description |
Maker |
| MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R7 |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119
Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| GS8170LW36AC |
18Mb B>1x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM
|
GSI Technology, Inc.
|
| 0809LD120 |
120 Watt / 28V / 1 Ghz LDMOS FET
120 WATT 28V 1 GHz LDMOS FET
120 WATT, 28V, 1 GHz LDMOS FET
|
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| DT18F08KDL-A DT18F08KSB-A DT18F08KDB-A DT18F08KEL- |
40 A, 800 V, SCR MODULE-5
100 A, 800 V, SCR
120 A, 1100 V, SCR
120 A, 1200 V, SCR
120 A, 1300 V, SCR
120 A, 1000 V, SCR
|
|
| MCM69R818CZP4.4 MCM69R736CZP4.4 MCM69R736CZP4.4R M |
4M Late Write HSTL
|
Motorola, Inc
|
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| GM76C256CW GM76C256CLLT-55W |
x8|2.7~5.5V|55/70/85/100/120|Low Power Slow SRAM - 256K x8 | 2.75.5V的| 55/70/85/100/120 |低功耗SRAM的速度 256K
32K X 8 STANDARD SRAM, 120 ns, PDSO28
|
TE Connectivity, Ltd.
HYNIX SEMICONDUCTOR INC
|
| IS61DDB41M36A |
Synchronous pipeline read with late write operation
|
Integrated Silicon Solu...
|
| MXP1005 |
Solar Array Diode; Package: SEE_FACTORY; IO (A): 2.25; Cj (pF): 600; Vrwm (V): 120; VF (V): 0.84; TSTG/Top (ºC): 200; Tj (ºC): 150; IR (µA): 10; 2.25 A, 120 V, SILICON, RECTIFIER DIODE
Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| GS8170DW72C-333I GS8170DW36C GS8170DW36C-200 GS817 |
18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI[GSI Technology]
|
