| PART |
Description |
Maker |
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| T0-4-8213/EZ T0-1-102/EA/SVB T0-1-102/V/SVB T0-4-1 |
SWITCH DISCONNECTOR 100A
ISOLATOR 6P 100A
ISOLATOR 6P 63A
ISOLATOR FLUSH 25A 3 POLE
ISOLATOR 3P 63A
ISOLATOR INT＇LOCK 63A 1 POLE
ISOLATOR FLUSH 63A 2 POLE
ISOLATOR FLUSH 63A 1 POLE
ISOLATOR INT＇LOCK 63A 2 POLE
ISOLATOR INT＇LOCK 63A 3 POLE
MCU CMOS 44 LD 20MHZ 8K FLASH, -40C to 85C, 44-PLCC, TUBE
ISOLATOR FLUSH 63A 3 POLE
ISOLATOR EXT SHAFT
ISOLATOR 32A INT
隔离页第32A
隔离页第63A
ISOLATOR 3P 25A 隔离P 25A
MCU CMOS 40 LD 20MHZ 8K FLASH, -40C to 85C, 40-PDIP, TUBE 隔离3P 32A
Transient Voltage Suppressor Diodes 隔离器镶入第32A 1
|
TVS-瞬态抑制二极管
Amphenol Corporation
Astrodyne, Inc.
Moeller Electric, Corp.
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| H27U518S2CTR-BC H27U518S2C |
512 Mbit (64 M x 8 bit) NAND Flash
512 Mb NAND Flash
|
Hynix Semiconductor
|
| HY27UF081G2A HY27UF161G2A-TPCS HY27UF161G2A-TPCB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
64M X 16 FLASH 3.3V PROM, 25000 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY27UF082G2B HY27UF162G2B HY27UF082G2B-F |
2Gb NAND FLASH
256M X 8 FLASH 3.3V PROM, PBGA63
|
HYNIX SEMICONDUCTOR INC
|
| AN1266 |
BENCHMARKING FLASH NOR AND FLASH NAND MEMORIES
|
SGS Thomson Microelectronics
|
| IRKTF112 IRKLF112 2212 IRKTF112-08HNN IRKTF111-04H |
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 快速晶闸管/二极管和晶闸晶闸
INT-A-pak Power Modules(8V,112A,可控二极H结构INT-A-pak 功率模块) 相依甲柏功率模块V的，112A章，可控二极结构相依甲柏功率模块
INT-A-pak Power Modules(8V,112A,可控可控L结构INT-A-pak 功率模块)
INT-A-pak Power Modules(4V,112A,可控可控L结构INT-A-pak 功率模块)
Receptacle AA series 3 pin female PCB Vertical - no grd or latch
From old datasheet system
800V Doubler Circuit Positive Control Inverter Thyristor/Diode in a INT-A-Pak package
800V Doubler Circuit Negative Control Inverter Thyristor/Diode in a INT-A-Pak package
800V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package
400V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
