PART |
Description |
Maker |
AB28F400BX-T90 A28F400BX-B AB28F400BX-B90 |
4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT 256K x16/ 512K x8 BOOT BLOCK FLASH MEMORY FAMILY JT 23C 2#16 21#20 SKT RECP JT 32C 32#20 PIN RECP 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56K x16。为512k × 8)启动块闪存系列 4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY
|
http:// Intel Corporation Intel Corp. Intel, Corp.
|
GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
|
http:// GSI Technology, Inc.
|
SST39VF010-90-4C-B3KE SST39VF040-90-4C-WHE SST39VF |
128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48 512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 256K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
|
LH28F400SUB-Z0 LH28F400SUB |
4M (512K 】 8, 256K 】 16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
LH28F400SUN-NC60 LH28F400SUN-NC80 LH28F400SUT-NC60 |
4M (512K ??8, 256K ??16) Flash Memory 4M (512K × 8, 256K × 16) Flash Memory 4M (512K 8, 256K 16) Flash Memory
|
Sharp Electrionic Components Sharp Corporation
|
AS29LV400 |
3V 512K x 8/256K ?16 CMOS Flash EEPROM
|
ETC
|
MBM29LV400TC-12 MBM29LV400TC-12PBT MBM29LV400TC-12 |
FLASH MEMORY 4M (512K x 8/256K x 16) BIT
|
Fujitsu Microelectronics
|
W28V400B W28V400T |
4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY
|
Winbond Electronics Corp
|
CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
MBM29LV400BC-55PCV MBM29LV400BC-55PF MBM29LV400BC- |
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
|
http://
|
UT62L12816I |
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 异步静态RAM高
|
OKI SEMICONDUCTOR CO., LTD.
|