| PART |
Description |
Maker |
| KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| KM6161000B |
64K x16 Bit Low Power CMOS Static RAM(64K x16浣?????CMOS ???RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BS616LV1010ACP75 BS616LV1010ACG75 BS616LV1010AIP75 |
Very Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconductor
Brilliance Semiconducto...
|
| KM68U512B |
64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM74XXX |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| KM6161000B |
64K X 16-Bit Low Power CMOS Static RAM
|
Samsung Electronics
|
| V53C464A V53C464J V53C464P V53C464Z |
High Performance / Low Power 64K x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| V53C466Z V53C466J |
High Performance / Low Power 64K x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| LP62S1664C LP62S1664CU-55LLI LP62S1664CU-55LLT LP6 |
64K X 16 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| CAT28LV64GI-20T CAT28LV64GI-15T CAT28LV64GA-20T CA |
DC-DC Converter, 2Watt, Input VDC: 5, Output VDC: 15, Max Output Current(A): 0.133, Package: SIP4, Isolation(VDC): 1000, Operating Temp. -40C to 85C, Low Ripple & Noise, High Efficiency up to 85%, Low Profile Plastic Case, Single Output
64K-Bit CMOS PARALLEL EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
8K X 8 EEPROM 3V, 200 ns, PDIP28
64K-Bit CMOS PARALLEL EEPROM
|
http://
EEPROM
Abracon, Corp.
Coilcraft, Inc.
Vishay Intertechnology, Inc.
Vicor, Corp.
Catalyst Semiconductor
|
