| PART |
Description |
Maker |
| IPD04N03LB |
OptiMOS®2 - SuperSO8, SO8, DPAK
|
Infineon
|
| IPD06N03LB |
OptiMOS®2 - SuperSO8, SO8, DPAK
|
Infineon
|
| TJA1040T/V518 TJA1040T/VM518 TJA1040T/VM118 TJA104 |
High-speed CAN transceiver with standby mode; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13"
High-speed CAN transceiver with standby mode; Package: SOT96-1 (SO8); Container: Tape reel smd
DATACOM, INTERFACE CIRCUIT, PDSO8
|
NXP SEMICONDUCTORS
|
| MMSF7P03HD |
Power MOSFET 7 A, 30 V, P Channel SO8(7A0V，P沟道功率MOSFET)
|
ON Semiconductor
|
| WFS5HB03N8 |
30V SO8 Complementary enhancementmode MOSFET H-Bridge
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| ZXMP3F37N8 ZXMP3F37N8TA |
30V SO8 P-channel enhancement mode MOSFET
|
Diodes
|
| ZXMN6A25DN8_06 ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25D |
Dual 60V SO8 N-channel enhancement mode MOSFET
|
ZETEX[Zetex Semiconductors]
|
| ZXMHC3F381N8 ZXMHC3F381N8TC |
30V SO8 Complementary enhancement mode MOSFET H-Bridge
|
Diodes Incorporated
|
| ZXMHC10A07N8 ZXMHC10A07N8TC |
100V SO8 Complementary enhancement mode MOSFET H-Bridge
|
Diodes Incorporated
|
| ZXMN3F318DN8 |
30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
|
Diodes
|
