| PART |
Description |
Maker |
| CTA2P1N2 CTA2P1N-7-F |
COMPLEX TRANSISTOR ARRAY
|
Diodes Incorporated
|
| DVR3V3W DVR1V8W DVR2V5W DVR2V5W-7 DVR5V0W DVR5V0W- |
COMPLEX ARRAY FOR VOLTAGE REGULATORS
|
DIODES[Diodes Incorporated]
|
| DRDN005W DRDPB26W-7 DRDN005W-7 DRDN010W DRDN010W-7 |
COMPLEX ARRAY FOR RELAY DRIVERS
|
DIODES[Diodes Incorporated]
|
| DRDNB21D-7 DRDNB21D |
COMPLEX ARRAY FOR DUAL RELAY DRIVER
|
DIODES[Diodes Incorporated]
|
| M63826FP M63826GP M63826P M63826P/FP/GP |
Transistor Array
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五（巴西）直| 5.5AI（四）|计划生育
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五（巴西）直| 8A条（丁）|计划生育
|
Mitsubishi Electric, Corp.
|
| 7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
|
Fuji Semiconductors, Inc.
|
| MUBW6-06A6 |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 7A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|7A我（丙）
|
Cooper Bussmann, Inc.
|
| TH3L20 TH3J10 TH3C10 TH3L10 |
TRANSISTOR,BJT,ARRAY,DARLINGTON,200V V(BR)CEO,3A I(C),SIP
TRANSISTOR,BJT,ARRAY,DARLINGTON,100V V(BR)CEO,3A I(C),SIP
High Voltage / High Speed Switching Transistors
From old datasheet system
|
Shindengen Electric Mfg
|
| MC3356 MC3346 MC3346D MC3356P |
GENERAL PURPOSE TRANSISTOR ARRAY ONE DIFFERENTIALLY CONNECTED PAIR AND THREE ISOIATED TRANSISTOR ARRAYS
|
MOTOROLA[Motorola, Inc]
|
| UPA1456 UPA1456H |
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC[NEC]
|
