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K7I643682M07 - 2Mx36 & 4Mx18 DDRII CIO b2 SRAM

K7I643682M07_5054791.PDF Datasheet


Part No.	K7I643682M07 K7I641882M
Description	2Mx36 & 4Mx18 DDRII CIO b2 SRAM
File Size	413.02K / 18 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Full text search : 2Mx36 & 4Mx18 DDRII CIO b2 SRAM

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Related Part Number

PART	Description	Maker
K7I163684B K7I161884B	512Kx36 & 1Mx18 DDRII CIO b4 SRAM	Samsung semiconductor
K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682	2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM 2M X 36 QDR SRAM, 0.5 ns, PBGA165 2M X 36 QDR SRAM, 0.45 ns, PBGA165	Samsung semiconductor
Z8036	Z-CIO AND CIO COUNTER / TIMER AND PARALLRL I/O UNIT	ZILOG[Zilog, Inc.]
Z8036ACM Z8036ACS Z8036ACE Z8036ACMB Z8536ACMB	Z-CIO and CIO counter/timer And parallel I/O unit, 6 MHz Z-CIO and CIO counter/timer And parallel I/O unit, 6MHz	Zilog
MT49H32M9 MT49H8M36 MT49H16M18	288Mb CIO Reduced Latency	Micron Technology, Inc.
IS61DDPB22M36 IS61DDPB22M36-375M3 IS61DDPB22M36-37	72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burst of 2) CIO Synchronous SRAMs	Integrated Silicon Solution, Inc
R1Q4A3618BBG-33R R1Q4A3636BBG-33R R1Q4A3618BBG-40R	36-Mbit DDRII SRAM 2-word Burst	Renesas Electronics Corporation
R1QEA7236ABG R1QBA7236ABG R1QBA7218ABG R1QBA7236AB	72-Mbit DDRII SRAM 2-word Burst	Renesas Electronics Corporation
R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3636CBG R	36-Mbit DDRII SRAM 2-word Burst	Renesas Electronics Corporation
R1Q5A3636BBG-60R R1Q5A3618BBG-60R	36-Mbit DDRII SRAM 4-word Burst	Renesas Electronics Corporation http://
AS4C32M16D2	512M (32M x 16 bit) DDRII Synchronous DRAM	Alliance Semiconductor ...

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