| PART |
Description |
Maker |
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
| MS7202AL MS7201AL MS7200L MS7200-25FC MS7201-25FC |
25ns; 256 x 9, 512 x9, 1K x 9 CMOS FIFO
256 X 9 OTHER FIFO, 25 ns, PQCC32
25ns 256 x 9, 512 x9, 1K x 9 CMOS FIFO
256 x 9 CMOS FIFO
256 x 9, 512 x 9, 1K x 9 CMOS FIFO
FIFO, Single, 256x9, Uni-directional, 5V Supply, Commercial, LDCC, 32-Pin
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| CY7C1361C-100AXC CY7C1361C-100AXE CY7C1361C-100BGC |
9-Mbit (256 K × 36/512 K × 18) Flow-Through SRAM
|
Cypress Semiconductor
|
| CY7C1355C-100BGC CY7C1357C-133AXC CY7C1355C-133AXC |
9-Mbit (256 K x 36 / 512 K x 18) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| M29W400DB55M1 M29W400DB55M1E M29W400DB55M1F M29W40 |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| CY14B104K-ZS45XI CY14B104K-ZS25XI CY14B104K-ZS25XI |
4-Mbit (512 K x 8/256 K x 16) nvSRAM with Real Time Clock 25 ns and 45 ns access times
|
Cypress Semiconductor
|
| CY7C429-30PC |
256/512/1K/2K/4K x 9 Asynchronous FIFO(508.06 k) 256/512/1K/2K/4K × 9异步FIFO08.06十一
|
Cypress Semiconductor, Corp.
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| CY7C420-25PC CY7C420-40PC CY7C420-65PC CY7C421 CY7 |
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 40 ns, PDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 4K X 9 OTHER FIFO, 40 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 256 X 9 OTHER FIFO, 40 ns, PQFP32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 40 ns, PQFP32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 20 ns, CDIP28
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AM29LV400B |
4 Mbit (512 K x 8-Bit/256 K x 16-Bit)
From old datasheet system
|
AMD Inc
|
| M39P0R1080E4ZASE M39P0R1080E4ZASF M39P0R9080E4 M39 |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
|
