| PART |
Description |
Maker |
| MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
| UF450-T47-T |
12 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| NTD23N03R NTD23N03R-1 NTD23N03R-1G NTD23N03RG NTD2 |
Power MOSFET 23A, 25V, N-Channel DPAK
23 Amps / 25 Volts / N-Channel DPAK
23 Amps, 25 Volts, N−Channel DPAK
23 Amps, 25 Volts, N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts
32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package
Receptacle With A Standard Tail
Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
| NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
| MTY20N50E |
N?Channel Power MOSFET
Power MOSFET 20 Amps, 500 Volts
|
ON Semiconductor
|
| NTTD2P02R2-D NTTD2P02R2/D |
Power MOSFET -2.4 Amps-20 Volts
Power MOSFET -2.4 Amps, -20 Volts Dual P-Channel Micro8
|
ON Semiconductor
|
| MMDFS3P303 MMDFS3P303R2 MMDFS3P303-D |
Power MOSFET 3 Amps / 30 Volts
Power MOSFET 3 Amps, 30 Volts P-Channel SO-8, FETKY
|
ONSEMI[ON Semiconductor]
|
