| PART |
Description |
Maker |
| SG2023 SG2023J_DESC SG2023N JAN2003J SG2003 SG2003 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Driver - Medium Current Array
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| SBS822 |
20V, 1A Rectifi er
|
Sanyo Semicon Device
|
| ENA0444A SB10015M-TL-E SB10015M12 |
15V, 1.0A Rectifi er
|
Sanyo Semicon Device
|
| 2N6123 2N6124 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE.
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE.
|
Continental Device India Limited
|
| APT30DL60BCT APT30DL60BCTG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| APT75DL60B APT75DL60BG APT75DL60S APT75DL60SG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| APT50DL60B APT50DL60BG APT50DL60S APT50DL60SG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| BC869 BC869-16 BC869-25 BC869_4 BC869/T1 |
From old datasheet system
PNP medium power transistor
Automotive Fuse; Current Rating:20A; Voltage Rating:32V; Fuse Type:Fast Acting; Body Material:Plastic; Fuse Terminals:Blade; Length:15.41mm; Series:297; Fuse Size/Group:15.41 x 10.92 x 3.81mm
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| NSD |
Surface Mount Schottky Barrier Rectifi er Diode
|
NIC-Components Corp.
|
| CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
