| PART |
Description |
Maker |
| GC4530-00 GC4531-00 GC4532-00 GC4533-00 GC4511-00 |
CONTROL DEVICES High Voltage NIP Diodes TM
|
Microsemi Corporation
|
| GC4270 GC4271 GC4220 GC4211 GC4212 GC4222 GC4223 G |
TM CONTROL DEVICES - HIGH SPEED PIN DIODES
|
Microsemi Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| TLP2403 |
High-Speed Digital Interfacing for Instrumentation and Control Devices Simplex/Multiplex Data Transmission
|
Toshiba Semiconductor
|
| 2SC3515 E000852 |
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS) npn型三重扩散型（高压控制，等离子显示器，数码管驱动器，阴极射线管的亮度控制应用
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL/ PLASMA DISPLAY/ NIXIE TUBE DRIVER/ CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
From old datasheet system
HIGH VOLYAGE CONTROL APPLICATIONS PLASMA DISPLAY,
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC3672 |
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TYBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS) npn型三重扩散型（高压控制，等离子显示，NIXIE TYBE驱动，阴极射线管亮度控制应用
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL/ PLASMA DISPLAY/ NIXIE TYBE DRIVER/ CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LC7535M |
Electronic Volume/Loudness Control with Serial Data Control and High Voltage-Handling Capacity
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| TJA1080 TJA1080TS TJA1080TS_N |
FlexRay transceiver
FlexRay transceiver - Application: Control Devices ; Controller type: Flexray ; Function: Transceivers ; Number of pins: 20 ; Operating temperature: -40~125 Cel; Supply voltage: 5.25 V
|
NXP Semiconductors N.V.
|
| IDT72T51543 IDT72T51553 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES
|
IDT
|
| IDT72T51556 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES
|
IDT
|
| VS-70TPS12PBF |
The 70TPS.. High Voltage Series of silicon controlled rectifiers are specifically designed for high and medium power switching and phase control applications
|
Vishay Siliconix
|
