| PART |
Description |
Maker |
| 3DD5606 |
CASE-RATED BIPOLAR TRANSISTOR
|
JILIN SINO-MICROELECTRONICS
|
| 3DD2101 3DD2101-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRG4RC10KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| IRG4PH20KPBF IRG4PH20KPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| IRGPC40K 1982 |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
From old datasheet system
|
IRF[International Rectifier]
|
| IRGR3B60KD2 IRGR3B60KD2PBF |
600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| HCA0207 |
Bipolar Transistor; Package/Case:TO-3P; Current Rating:12A; Voltage Rating:800V
Carbon Film Resistors, Power Type
From old datasheet system
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| IRGBC30K-S |
Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| BUZ101S Q67040-S4013-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
SIPMOS ? Power Transistor
INDUCTOR SHIELDED 470UH 20% SMT
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
|
http://
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
