| PART |
Description |
Maker |
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRFG35010ANT1 |
Gallium Arsenide PHEMT
|
Freescale Semiconductor, Inc
|
| MRFG35020AR1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35010MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|
| MGRB2025CT MGRB2025CT_D ON1884 |
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS
Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| DGS20-022A DGSK40-025A DGS20-025A DGSK40-022A |
250V gallium arsenide schottky rectifier
220V gallium arsenide schottky rectifier
|
IXYS[IXYS Corporation]
|
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| GN01032N |
Gallium Arsenide Devices
|
Panasonic
|
| GN01021 |
Gallium Arsenide Devices
|
Panasonic
|
| GN04073N |
Gallium Arsenide Devices
|
Panasonic
|
