PART |
Description |
Maker |
UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
|
Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
|
IDT70T3319S133BF IDT70T3319S133BC IDT70T3319S133DD |
JFET-Input Operational Amplifier 8-SOIC 0 to 70 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高.5V12/256/128K X 18 SYNCHRONOU S双,端口静态与3.3V.5V的内存界 JFET-Input Operational Amplifier 8-TSSOP 0 to 70 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 JFET-Input Operational Amplifier 8-SO 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA208
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
CY62156ESL-45BVXI |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
CY62148ELL-45ZSXA |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
CY62157E |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
CY7C1049CV33 |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
5962F1123501QXA CYPT1049DV33-12FZMB CYRS1049DV33-1 |
4-Mbit (512 K 8) Static RAM with RadStop™ Technology
|
Cypress
|
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
IDT70T633S12BCI IDT70T633S8DD IDT70T631S8DD IDT70T |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
CY7C0430V 7C0430V CY7C0430V-133BGI CY7C0430V-133BG |
3.3V 64K x 18 Synchronous QuadPort⑩ Static RAM 3.3V 64K X 18 SYNCHRONOUS QUADPORT⒙ STATIC RAM From old datasheet system 3.3V 64K x 18Synchronous QuadPort?Static RAM
|
CYPRESS[Cypress Semiconductor]
|
SST4117A SST4118A |
1-Mb (128K x 8) Static RAM 1-Mbit (64K x 16) Static RAM 晶体管|场效应| N沟道| 80uA电流我(直)| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|