PART |
Description |
Maker |
PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
IXFH24N50 IXFH26N50 IXFT26N50 IXFM24N50 IXFH26N50S |
26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 2MM TERMINAL STRIPS HiPerFET Power MOSFETs 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
IXYS[IXYS Corporation] IXYS, Corp.
|
STW45NM50FD09 STW45NM50FD |
45 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET (with fast diode) N-channel 500 V, 0.07 楼?, 45 A, TO-247 FDmesh垄芒 Power MOSFET (with fast diode)
|
STMicroelectronics
|
FDA24N50 |
500V N-Channel MOSFET N-Channel MOSFET; Package: TO-3PN; No of Pins: 3; Container: Rail 24 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel MOSFET 500V, 24A, 0.19ヘ N-Channel MOSFET 500V, 24A, 0.19Ω
|
Fairchild Semiconductor, Corp.
|
VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system Power Factor Correction Modules: MOSFET
|
IXYS, Corp. IXYS[IXYS Corporation]
|
STW29NK50Z |
31 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC N-CHANNEL 500 V - 0.105ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET N-CHANNEL 500 V - 0.105 Ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
IRF830A |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为500V,导通电阻为1.5Ω,漏电流.5A 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
FMC05N50E |
N-CHANNEL SILICON POWER MOSFET 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET T-PACK(S), 3 PIN
|
Fuji Electric Holdings Co., Ltd.
|
IRFN440 JANTX2N7222U JANTXV2N7222U IRFN440PBF |
Simple Drive Requirements 500V Single N-Channel Hi-Rel MOSFET in a SMD-1 package 8 A, 500 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
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