PART |
Description |
Maker |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SC2500 E000724 |
From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SC307205 2SC3072 2SC3072-05 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
2SC4683 |
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SC468405 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
2SC4684 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
2SA131407 2SA1314 |
Strobe Flash Applications Audio Power Applications
|
Toshiba Semiconductor
|
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SC503004 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
GT8G10306 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|