PART |
Description |
Maker |
APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
PJF8N60 PJP8N60 |
600V N-Channel Enhancement Mode MOSFET
|
Pan Jit International Inc.
|
PJF2N60 PJP2N60 |
600V N-Channel Enhancement Mode MOSFET
|
Pan Jit International Inc.
|
PJF10N60 PJP10N60 |
600V N-Channel Enhancement Mode MOSFET
|
Pan Jit International Inc.
|
HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S |
600V, SMPS Series N-Channel IGBT From old datasheet system 600V/ SMPS Series N-Channel IGBT 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB 600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
INTERSIL[Intersil Corporation] Intersil, Corp. Fairchild Semiconductor, Corp.
|
NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK LASER MOD 670NM .95MW MVP ROUND LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
FQP8N60C FQPF8N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQP6N60C FQPF6N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
APT60M90JN |
POWER MOS IV 600V 57A 0.090 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
IXTQ22N60P IXTV22N60PS |
MOSFET N-CH 600V 22A TO-3P 22 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET PolarHVTM Power MOSFET N-Channel Enhancement Mode
|
IXYS, Corp. IXYS Corporation
|