| PART |
Description |
Maker |
| ST7400 |
ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN1810 |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4440 |
STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| V15P45 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay
|
| V10PN50-M3-15 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10P45-M386A V10P45-87A V10P45-86A |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V12P10HM386A V12P10-M386A V12P10-87A V12P10-86A |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V8P10-M3_86A V8P10-M3_87A V8P10-M3/87A V8P10-M3/86 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V8P10-E387A V8P10-E386A V8P10HE386A V8P10HE387A |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10P12HM3-86A V10P12-M3-86A V10P12-M3-87A V10P12HM |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
